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| NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.18 (max) NUltra High-Speed Switching NSOT-89 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP161A01A8PR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-89 package makes high density mounting possible. Low on-state resistance : Rds(on)=0.11(Vgs=10V) : Rds(on)=0.18(Vgs=4.5V) Ultra high-speed switching Operational Voltage : 4.5V High density mounting : SOT-89 PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source 11 PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current N-Channel MOS FET (1 device built-in) Ta=25C SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 30 20 3 9 3 2 150 -55~150 UNITS V V A A A W C C Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Note: When implemented on a ceramic PCB 850 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=30V, Vgs=0V Vgs=20V, Vds=0V Id=1mA, Vds=10V Id=1.5A, Vgs=10V Id=1.5A, Vgs=4.5V Id=1.5A, Vds=10V If=3A, Vgs=0V MIN TYP MAX 10 10 1.0 0.08 0.14 3.5 0.85 1.1 0.11 0.18 UNITS A A V S V Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=10V, Vgs=0V f=1MHz MIN TYP 220 140 55 MAX Ta=25: UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=5V, Id=1.5A Vdd=10V CONDITIONS MIN TYP 15 15 25 15 MAX Ta=25: UNITS ns ns ns ns Thermal Characteristics PARAMETER Thermal Resistance (channel-ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a ceramic PCB MIN TYP 62.5 MAX UNITS C/W 11 851 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Pulse Test, Ta=25: DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Pulse Test, Vds=10V Drain Current:Id (A) Drain Current:Id (A) Drain-Source Voltage:Vds (V) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25: DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25: Drain-Source On-State Resistance :Rds (on) () Drain-Source On-State Resistance :Rds (on) () Gate-Source Voltage:Vgs (V) Drain Current:Id (A) 11 Drain-Source On-State Resistance :Rds (on) () DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Pulse Test GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) Ambient Temp.:Topr (:) Ambient Temp.:Topr (:) 852 CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Vgs=0V, f=1MHz SWITCHING TIME vs. DRAIN CURRENT Vgs=5V, Vdd 10V, PW=10sec. duty1% Drain-Source Voltage:Vds (V) Switching Time:t (ns) Capacitance:C (pF) Drain Current:Id (A) GATE-SOURCE VOLTAGE vs. GATE CHARGE Vds=10V, Id=3A REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Pulse Test Gate-Source Voltage:Vgs (V) Gate Charge:Qg (nc) Reverse Drain Current:Id (A) Source-Drain Voltage:Vsd (V) STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH Rth (ch-a)=62.5C/W, (Implemented on a ceramic PCB) 11 Single Pulse Pulse Width:PW (sec) 853 |
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